Memorie RAM notebook Kingston, SODIMM, DDR4, 4GB, CL19, 2666Mhz

SKU: KVR26S19S6/4

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1.770,99 lei

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Description

Memorie RAM notebook Kingston, SODIMM, DDR4, 4GB, 2666MHz, CL19

Specification

Overview

_Capacitate memorie RAM4GB
_Frecvența memorie RAM2666MHZ
DRAM-KitNo
ECCNo
KitNo
_Tip memorie RAMDDR4
__Latenta19 CL
Component forLaptop
Buffered memory typeUnregistered (unbuffered)
Internal memory typeDDR4
Memory ranking1
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Memory clock speed2666 MHz
Memory voltage1.2 V
Internal memory4 GB
Memory layout (modules x size)1 x 4 GB
CAS latency19
Memory form factor260-pin SO-DIMM
Memory data transfer rate2666 MT/s
Kit dual channelNu
Kit quad channelNu
Tip:DDR4 SODIMM
Latenta17 – 20 CL
Tensiune alimentare1.2 V
Capacitate4 GB
Frecventa2666 MHz
Operating temperature (T-T)0 – 85 °C
Harmonized System (HS) code84733020
Country of originTaiwan
Compliance certificatesRoHS
Storage temperature (T-T)-55 – 100 °C
Doesn't containHalogen
Width69.6 mm
Height30 mm
Depth245 mm
ProducatorKINGSTON
Garantie999

Processor

_Capacitate memorie RAM4GB
_Frecvența memorie RAM2666MHZ
DRAM-KitNo
ECCNo
KitNo
_Tip memorie RAMDDR4
__Latenta19 CL
Component forLaptop
Buffered memory typeUnregistered (unbuffered)
Internal memory typeDDR4
Memory ranking1
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Memory clock speed2666 MHz
Memory voltage1.2 V
Internal memory4 GB
Memory layout (modules x size)1 x 4 GB
CAS latency19
Memory form factor260-pin SO-DIMM
Memory data transfer rate2666 MT/s
Kit dual channelNu
Kit quad channelNu
Tip:DDR4 SODIMM
Latenta17 – 20 CL
Tensiune alimentare1.2 V
Capacitate4 GB
Frecventa2666 MHz
Operating temperature (T-T)0 – 85 °C
Harmonized System (HS) code84733020
Country of originTaiwan
Compliance certificatesRoHS
Storage temperature (T-T)-55 – 100 °C
Doesn't containHalogen
Width69.6 mm
Height30 mm
Depth245 mm
ProducatorKINGSTON
Garantie999

Display

_Capacitate memorie RAM4GB
_Frecvența memorie RAM2666MHZ
DRAM-KitNo
ECCNo
KitNo
_Tip memorie RAMDDR4
__Latenta19 CL
Component forLaptop
Buffered memory typeUnregistered (unbuffered)
Internal memory typeDDR4
Memory ranking1
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Memory clock speed2666 MHz
Memory voltage1.2 V
Internal memory4 GB
Memory layout (modules x size)1 x 4 GB
CAS latency19
Memory form factor260-pin SO-DIMM
Memory data transfer rate2666 MT/s
Kit dual channelNu
Kit quad channelNu
Tip:DDR4 SODIMM
Latenta17 – 20 CL
Tensiune alimentare1.2 V
Capacitate4 GB
Frecventa2666 MHz
Operating temperature (T-T)0 – 85 °C
Harmonized System (HS) code84733020
Country of originTaiwan
Compliance certificatesRoHS
Storage temperature (T-T)-55 – 100 °C
Doesn't containHalogen
Width69.6 mm
Height30 mm
Depth245 mm
ProducatorKINGSTON
Garantie999

RAM

_Capacitate memorie RAM4GB
_Frecvența memorie RAM2666MHZ
DRAM-KitNo
ECCNo
KitNo
_Tip memorie RAMDDR4
__Latenta19 CL
Component forLaptop
Buffered memory typeUnregistered (unbuffered)
Internal memory typeDDR4
Memory ranking1
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Memory clock speed2666 MHz
Memory voltage1.2 V
Internal memory4 GB
Memory layout (modules x size)1 x 4 GB
CAS latency19
Memory form factor260-pin SO-DIMM
Memory data transfer rate2666 MT/s
Kit dual channelNu
Kit quad channelNu
Tip:DDR4 SODIMM
Latenta17 – 20 CL
Tensiune alimentare1.2 V
Capacitate4 GB
Frecventa2666 MHz
Operating temperature (T-T)0 – 85 °C
Harmonized System (HS) code84733020
Country of originTaiwan
Compliance certificatesRoHS
Storage temperature (T-T)-55 – 100 °C
Doesn't containHalogen
Width69.6 mm
Height30 mm
Depth245 mm
ProducatorKINGSTON
Garantie999

Storage

_Capacitate memorie RAM4GB
_Frecvența memorie RAM2666MHZ
DRAM-KitNo
ECCNo
KitNo
_Tip memorie RAMDDR4
__Latenta19 CL
Component forLaptop
Buffered memory typeUnregistered (unbuffered)
Internal memory typeDDR4
Memory ranking1
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Memory clock speed2666 MHz
Memory voltage1.2 V
Internal memory4 GB
Memory layout (modules x size)1 x 4 GB
CAS latency19
Memory form factor260-pin SO-DIMM
Memory data transfer rate2666 MT/s
Kit dual channelNu
Kit quad channelNu
Tip:DDR4 SODIMM
Latenta17 – 20 CL
Tensiune alimentare1.2 V
Capacitate4 GB
Frecventa2666 MHz
Operating temperature (T-T)0 – 85 °C
Harmonized System (HS) code84733020
Country of originTaiwan
Compliance certificatesRoHS
Storage temperature (T-T)-55 – 100 °C
Doesn't containHalogen
Width69.6 mm
Height30 mm
Depth245 mm
ProducatorKINGSTON
Garantie999

Video Card

_Capacitate memorie RAM4GB
_Frecvența memorie RAM2666MHZ
DRAM-KitNo
ECCNo
KitNo
_Tip memorie RAMDDR4
__Latenta19 CL
Component forLaptop
Buffered memory typeUnregistered (unbuffered)
Internal memory typeDDR4
Memory ranking1
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Memory clock speed2666 MHz
Memory voltage1.2 V
Internal memory4 GB
Memory layout (modules x size)1 x 4 GB
CAS latency19
Memory form factor260-pin SO-DIMM
Memory data transfer rate2666 MT/s
Kit dual channelNu
Kit quad channelNu
Tip:DDR4 SODIMM
Latenta17 – 20 CL
Tensiune alimentare1.2 V
Capacitate4 GB
Frecventa2666 MHz
Operating temperature (T-T)0 – 85 °C
Harmonized System (HS) code84733020
Country of originTaiwan
Compliance certificatesRoHS
Storage temperature (T-T)-55 – 100 °C
Doesn't containHalogen
Width69.6 mm
Height30 mm
Depth245 mm
ProducatorKINGSTON
Garantie999

Connectivity

_Capacitate memorie RAM4GB
_Frecvența memorie RAM2666MHZ
DRAM-KitNo
ECCNo
KitNo
_Tip memorie RAMDDR4
__Latenta19 CL
Component forLaptop
Buffered memory typeUnregistered (unbuffered)
Internal memory typeDDR4
Memory ranking1
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Memory clock speed2666 MHz
Memory voltage1.2 V
Internal memory4 GB
Memory layout (modules x size)1 x 4 GB
CAS latency19
Memory form factor260-pin SO-DIMM
Memory data transfer rate2666 MT/s
Kit dual channelNu
Kit quad channelNu
Tip:DDR4 SODIMM
Latenta17 – 20 CL
Tensiune alimentare1.2 V
Capacitate4 GB
Frecventa2666 MHz
Operating temperature (T-T)0 – 85 °C
Harmonized System (HS) code84733020
Country of originTaiwan
Compliance certificatesRoHS
Storage temperature (T-T)-55 – 100 °C
Doesn't containHalogen
Width69.6 mm
Height30 mm
Depth245 mm
ProducatorKINGSTON
Garantie999

Features

_Capacitate memorie RAM4GB
_Frecvența memorie RAM2666MHZ
DRAM-KitNo
ECCNo
KitNo
_Tip memorie RAMDDR4
__Latenta19 CL
Component forLaptop
Buffered memory typeUnregistered (unbuffered)
Internal memory typeDDR4
Memory ranking1
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Memory clock speed2666 MHz
Memory voltage1.2 V
Internal memory4 GB
Memory layout (modules x size)1 x 4 GB
CAS latency19
Memory form factor260-pin SO-DIMM
Memory data transfer rate2666 MT/s
Kit dual channelNu
Kit quad channelNu
Tip:DDR4 SODIMM
Latenta17 – 20 CL
Tensiune alimentare1.2 V
Capacitate4 GB
Frecventa2666 MHz
Operating temperature (T-T)0 – 85 °C
Harmonized System (HS) code84733020
Country of originTaiwan
Compliance certificatesRoHS
Storage temperature (T-T)-55 – 100 °C
Doesn't containHalogen
Width69.6 mm
Height30 mm
Depth245 mm
ProducatorKINGSTON
Garantie999

Battery

_Capacitate memorie RAM4GB
_Frecvența memorie RAM2666MHZ
DRAM-KitNo
ECCNo
KitNo
_Tip memorie RAMDDR4
__Latenta19 CL
Component forLaptop
Buffered memory typeUnregistered (unbuffered)
Internal memory typeDDR4
Memory ranking1
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Memory clock speed2666 MHz
Memory voltage1.2 V
Internal memory4 GB
Memory layout (modules x size)1 x 4 GB
CAS latency19
Memory form factor260-pin SO-DIMM
Memory data transfer rate2666 MT/s
Kit dual channelNu
Kit quad channelNu
Tip:DDR4 SODIMM
Latenta17 – 20 CL
Tensiune alimentare1.2 V
Capacitate4 GB
Frecventa2666 MHz
Operating temperature (T-T)0 – 85 °C
Harmonized System (HS) code84733020
Country of originTaiwan
Compliance certificatesRoHS
Storage temperature (T-T)-55 – 100 °C
Doesn't containHalogen
Width69.6 mm
Height30 mm
Depth245 mm
ProducatorKINGSTON
Garantie999

General

_Capacitate memorie RAM4GB
_Frecvența memorie RAM2666MHZ
DRAM-KitNo
ECCNo
KitNo
_Tip memorie RAMDDR4
__Latenta19 CL
Component forLaptop
Buffered memory typeUnregistered (unbuffered)
Internal memory typeDDR4
Memory ranking1
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Programming power voltage (VPP)2.5 V
Memory clock speed2666 MHz
Memory voltage1.2 V
Internal memory4 GB
Memory layout (modules x size)1 x 4 GB
CAS latency19
Memory form factor260-pin SO-DIMM
Memory data transfer rate2666 MT/s
Kit dual channelNu
Kit quad channelNu
Tip:DDR4 SODIMM
Latenta17 – 20 CL
Tensiune alimentare1.2 V
Capacitate4 GB
Frecventa2666 MHz
Operating temperature (T-T)0 – 85 °C
Harmonized System (HS) code84733020
Country of originTaiwan
Compliance certificatesRoHS
Storage temperature (T-T)-55 – 100 °C
Doesn't containHalogen
Width69.6 mm
Height30 mm
Depth245 mm
ProducatorKINGSTON
Garantie999

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